英语翻译
问题描述：
英语翻译
The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aqueous solutions of KOH with concentrations in the range of 0.002–0.006 M.The solutions were magnetically stirred during the etching.The etch rate of the GaN under these conditions was approximately 25 nm/min.
答
在用于刻蚀的实验装备已经在其他地方详细描述.GaN（氮化镓）样品在356nm处有着25 mW/cm2 的典型强度的350瓦的汞弧灯照射下进行刻蚀.电解液是浓度在0.002–0.006M（这应该是摩尔每升吧）之间的稀KOH水溶液.在刻蚀中用磁力搅拌器搅拌溶液.在这个条件下GaN的刻蚀速率大约是25 nm/min.
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