英语翻译1#内存经过KTI测试我们发现DQ14报错,对照维修图对照发现与之对应的电阻是R15,用仪器测量发现R15的阻值异常(测量值为260欧姆,正常为15欧姆).在300倍显微镜下,发现R15有被烧伤击穿痕迹,应该是电流过大导致.

问题描述:

英语翻译
1#内存经过KTI测试我们发现DQ14报错,对照维修图对照发现与之对应的电阻是R15,用仪器测量发现R15的阻值异常(测量值为260欧姆,正常为15欧姆).在300倍显微镜下,发现R15有被烧伤击穿痕迹,应该是电流过大导致.

1 # memory after KTI test we found DQ14 error control maintenance matching picture of the resistance of the discovery and corresponding is R15, measured with instrument resistance of the R15 found abnormal (measured values for 260 ohms, normal for 15 ohms). In 300 x microscope, found that have burned R15 breakdown trace, should be current too large

1 # memory test we found that DQ14 through KTI error, control maintenance plans were found corresponding resistor is R15, R15 found with instruments to measure the resistance anomalies (measured value of 260 ohms, the normal is 15 ohms). At 300 times magnification, R15 has been found traces of burns breakdown should lead to excessive current.

Through KTI test on 1#RAM we discovered the fault from DQ14.By checking up the maintenance picture we dicovered that it was R15 that corresponded with the fault.R15 was detected abnormal by apparatus( the measured value was 260 ohm while the normal value is 15 ohm).Breakdown vestiges were found on the R15 by the 300X microscope which should have been led by the excessive current.

1 # memory after a KTI test we found DQ14 error, control chart control repair found and the corresponding resistor is R15, use instruments to measure the resistance of the R15 abnormalities found ( measured value of 260 ohm, normal is 15 ohms ). In 300 times under a microscope, found that R15 had burned breakdown traces, should be current is too large to.