英语翻译The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose reaction for TiSi takes place at a pressureof Pθ,according to this reason we here advance a plausible partial explanation of these resultsinvolving a thermal decompose reaction of TiSiTiSiTi+Si (1)leading to the form

英语翻译
The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose reaction for TiSi takes place at a pressureof Pθ,according to this reason we here advance a plausible partial explanation of these resultsinvolving a thermal decompose reaction of TiSiTiSiTi+Si (1)leading to the formation vapor Si.The Si then immediately reacts with O2 to form SiO2 at the experimentaltemperature:Si+O2SiO2 (2)Fig.1.Design of the chamber for the heating experiment.No.4 A NOVEL CHEMICAL ROUTE TO SiO2 NANOWIRES 391Fig.2.(a) White product growing on the Ti foil surface,(b) large quantities of the nanowires of smooth surface and uniformdiameter,(c) HRTEM image of the nanowires,(d) EDX analyses of individual nanowire.The SiO2 from eq.(2) condense solid SiO2 .As long as nuclei formed,i.e.shorter nanowires,thermalflow occurs along the nanowire axis,hence the nanowire growth continues along thisnanowire axis.So heat is dissipating along a and c axes[8] (fig.3(a)),so that this growth processremains thermodynamic balance.Finally,the very long SiO2 nanowires are formed.The amorphousSiO2 nanowires are believed to form by chemical reactions and analogous growth mechanismsinvolving a vapor-liquid-solid process.Fig.